Referenced Items are not available for this document.
For FUSI SOI CMOSFET, the impact of high stress contact etching stop layer (CESL) SiN layer on device performance and reliability were investigated. In this work, FUSI SOI n/pMOSFET driving capability and mobility can be enhanced with high tensile and compressive CESL layer in respectively; we found that high stress CESL layer will also induced more damages especially on 90 nnm device, resulting in FUSI SOI device degradation.
Published in:
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Date of Conference: 20-22 Dec. 2007
- Page(s):
- 593 - 596
- E-ISBN :
- 978-1-4244-0637-1
- Print ISBN:
- 978-1-4244-0636-4
- INSPEC Accession Number:
- 9856249
- Conference Location :
- Tainan
- Digital Object Identifier :
- 10.1109/EDSSC.2007.4450194
- Product Type:
- Conference Publications
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