By Topic

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Qiang Cui ; Zhejiang Univ., Hangzhou ; Yan Han ; Liou, J.J. ; Shurong Dong

Speed performance plays a critical role in protection devices against ESD (Electro-Static Discharge) overstress under CDM (Charged Device Model). It is too demanding to obtain speed performance of protection devices under CDM accurately by testing. Therefore we have to resort to TCAD (Technology Computer Aided Design) method to evaluate speed performance under CDM. This TCAD methodology is based on mix-mode transient circuit simulation, which depicts ESD events better. Two time constants, Ttrigger and Trecover, and two key coefficients, Ftrigger and Crecover, are provided to characterize and evaluate speed performance of ESD protection devices. The results show that this TCAD methodology has a good ability of convergence and is a good tool to evaluate speed performance of ESD protection devices quantificationally. Anlayse results show that speed performance of SCR is superior over ggNMOS in not only triggering but also bypassing ESD currents to recover the voltage towards a safe level.

Published in:

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Date of Conference:

20-22 Dec. 2007