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Aluminium Incorporation in Lanthanum Oxide Films by using Plasma Immersion Ion Implantation

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7 Author(s)
Banani Sen ; Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong. Email: bananisen@ieee.org ; B. L. Yang ; Hei Wong ; P. K. Chu
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The physics and the effects of aluminium incorporation into lanthanum oxide (La2O3) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5% ) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La2O3 films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current.

Published in:

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Date of Conference:

20-22 Dec. 2007