Referenced Items are not available for this document.
Electrical Properties of Bilayer SrBi
Ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. The memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure. Besides, the bilayered SBT/BZT structure exhibits a ferroelectric behavior with a remanent polarization of 8 muC/cm2 and a coercive field of and 130 kV/cm.
Published in:
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Date of Conference: 20-22 Dec. 2007
- Page(s):
- 169 - 172
- E-ISBN :
- 978-1-4244-0637-1
- Print ISBN:
- 978-1-4244-0637-1
- INSPEC Accession Number:
- 9856145
- Conference Location :
- Tainan
- Digital Object Identifier :
- 10.1109/EDSSC.2007.4450089
- Product Type:
- Conference Publications
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