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Ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. The memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure. Besides, the bilayered SBT/BZT structure exhibits a ferroelectric behavior with a remanent polarization of 8 muC/cm2 and a coercive field of and 130 kV/cm.
Date of Conference: 20-22 Dec. 2007