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Investigation of gate oxide thickness effect on the radiation-induced traps in MOSFET devices using OTCP method

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7 Author(s)
Boualem Djezzar ; Microelectronics and Nanotechnologies, Centre de Développement des Technologies Avancées, CDTA, Algiers, Algeria ; Slimane Oussalah ; Abderrazak Smatti ; Rabah Yefsah
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N-MOSFET of 20 nm and 40 nm gate oxide thicknesses were irradiated with 60Co gamma-ray source. They were characterized by Oxide-Trap based on Charge-Pumping method (OTCP). The total dose response is shown to depend on gate oxide. In fact, the results show that the turn around effect occurs at different doses depending on oxide thickness. For a 40 nm oxide thick, it appears at 10 krad and occurs at 500 krad for an oxide thickness of 20 nm. This means that thinner oxides are less sensitive to radiation than thicker one.

Published in:

Design & Technology of Integrated Systems in Nanoscale Era, 2007. DTIS. International Conference on

Date of Conference:

2-5 Sept. 2007