By Topic

5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Morton, M.A. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Comeau, J.P. ; Cressler, J.D. ; Mitchell, M.
more authors

A hybrid pi/t bit passive topology is presented to enable a significant reduction in the die area for a high-pass/low-pass phase shifter is presented. A hybrid-topology 5 bit digital X-band phase shifter was designed, fabricated and tested using a 200 GHz, 0.13 mum SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology. Size and performance characteristics are presented as a contrast to an all-pi phase shifter recently presented by Comeau et al. using the same SiGe BiCMOS technology and design goals. With similar bit passive performance to the all-pi design, the hybrid shifter allows for a total shifter die-area reduction of 50.5%. The absolute phase error of the shifter was less than plusmn13 from 8 to 12 GHz, with an average insertion loss of -20 dB.

Published in:

Microwaves, Antennas & Propagation, IET  (Volume:2 ,  Issue: 1 )