By Topic

High-Efficiency Broadband Parallel-Circuit Class E RF Power Amplifier With Reactance-Compensation Technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kumar, N. ; Motorola Technol. (M), Penang ; Prakash, Chacko ; Grebennikov, A. ; Mediano, A.

Class E amplifier offers high efficiency approaching 100% for an ideal case. This paper introduces a first practical implementation of a novel broadband class E power amplifier design combining a parallel-circuit load network with a reactance compensation technique. The novel broadband parallel-circuit class E load network using reactance compensation technique has been discussed based on theory and its experimental verification. A proper guidelines method of designing a high-efficiency broadband class E power amplifier with an LDMOS transistor until the final prototype measurement and optimization will be discussed. In the measurement level, the drain efficiency of 74% at an operating power of 8 W and power flatness of 0.7 dB are achieved across a bandwidth of 136-174 MHz. The efficiency result is the highest result for VHF broadband frequency to date with a low supply voltage of 7.2 V. Simulations of the efficiency, output power, drain voltage waveform, and load angle (impedance) were verified by measurements and good agreements were obtained.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:56 ,  Issue: 3 )