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In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC filtering network were used. The amplifier shows a maximum measured gain of 13.2 dB at exactly 79 GHz and an excellent reverse isolation of more than 40 dB over the whole measured frequency range. Its performance was measured at different temperatures, showing a decrease of 5.3 dB in gain between room temperature and 85degC. The measured -1 dB input compression point is at -15 dBm. The power consumption is 52 mW at a supply voltage of 2.7 V. The circuit has a compact layout and consumes an area of 525 times 500 mum2 including bonding pads.