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High Quality Monolithic 8-Shaped Inductors for Silicon RF IC Design

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1 Author(s)
Tesson, O. ; NXP Semicond., Caen

In this paper, RF characterization results of 8-shaped inductors on high resistivity silicon (HRS) substrate are presented. Electrical performances reported to area occupation of 8-shaped inductors are compared to those of classical octagonal/rectangular inductors. It is observed that 8-shaped inductors lead to inductance values 60% higher than what could be expected from classical octagonal/rectangular devices. A predictive electrical model is proposed based on previous investigations. Correlations between measurements and simulation data are found satisfactory.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Date of Conference:

23-25 Jan. 2008

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