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Kirk Effect Induced Bias Dependency of Thermal Resistance in SiGe HBTs

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3 Author(s)
Hao Jiang ; Sch. of Eng., San Francisco State Univ., San Francisco, CA ; Jie Zheng ; Recanelli, M.

The thermal resistance of SiGe HBTs for high power applications reduces significantly when the bias current increases. This phenomenon is explained by both measurements and simulations for the first time.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Date of Conference:

23-25 Jan. 2008