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Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs

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4 Author(s)
Peng Cheng ; Sch. of Electr. & Comput. Eng., N.W. Georgia Inst. of Technol., Atlanta, GA ; Appaswamy, A. ; Bellini, M. ; Cressler, J.D.

A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Date of Conference:

23-25 Jan. 2008