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Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques

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2 Author(s)
Jiahui Yuan ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Cressler, J.D.

A peak fT of 325 GHz is achieved, for the first time, in a 130 nm, 200 GHz, 3rd-generation SiGe HBT technology at 300 K, by utilizing fT-doubler techniques. This speed enhancement is equivalent to gaining an additional generational node (from 3rd to 4th), with no underlying change to the transistor profile or lithography. The fT-doubler can be treated as a single transistor unit cell during circuit design, which is verified by the investigation of its small-signal equivalent circuit. Reduced Cpi is demonstrated to be the root origin of the fT-enhancement. The impact of emitter geometry on performance is investigated. A record fT of 438 GHz is achieved at 93 K.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Date of Conference:

23-25 Jan. 2008