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SIMMWICs on Micromachined Silicon on Insulator Substrates Beyond 100 GHz

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2 Author(s)
Muller, A. ; Robert Bosch GmbH, Ditzingen ; Kasper, E.

The realization of SIMMWICs (silicon millimeter-wave integrated circuits) for frequencies above 100 GHz is presented. Epitaxial layers grown with molecular beam epitaxy and low-loss microstrip lines allow the implementation of a variety of devices required for basic system-on-chip building blocks. The applied silicon technology using Al/AlNiSi contacts offers excellent integration possibilities. Schottky diodes are designed for Mott mode operation and feature cutoff-frequencies of more than 700 GHz. Substrate membranes with a thickness of 50 mum are created by applying a selective etching process using silicon on insulator (SOI) wafers. Different microstrip circuit designs demonstrate the integration potential. Finally, two singly balanced mixer designs with low LO-power drive demands and low conversion loss characteristics are exposed. We choose the 122 GHz ISM band as an example for the demonstration of the potential of this cost-effective integration approach.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Date of Conference:

23-25 Jan. 2008