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InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

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7 Author(s)
K. L. Lew ; Nanyang Technol. Univ., Singapore ; S. F. Yoon ; H. Tanoto ; K. P. Chen
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What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collector-emitter offset voltage and the knee voltage of the device are ~150 mV and <1 V, respectively. The maximum gain of the device is ~25 at collector current of ~100 mA. The collector and base ideality factor are ~1.01 and ~1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach.

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Electronics Letters  (Volume:44 ,  Issue: 3 )