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Selective postgrowth band gap tuning of self-assembled InAs/InGaAs/InP quantum dot (QD) structures has been investigated. Very large band gap blueshift of over 158 meV of the InAs QD structure has been received through the intermixing by exposing the sample under argon plasma and followed by thermal annealing at 780 degC. Selective intermixing of the InAs QD structure has been studied by depositing a SiO2 mask layer on the sample for the intermixing. The largest selective band gap shift between the SiO2 covered and uncovered regions of the sample reaches 77 meV. This intermixing selectivity decreases when the annealing temperature is increased. This reduction in the intermixing selectivity is attributed to the enhanced QDs intermixing of the SiO2-masked samples because of the out diffusion of different elements from the InAs/InGaAs/InP QD structure into the SiO2 cover layer. Three different energy band gap shifts of an InAs/InGaAs/InP QD structure across the wafer have been received by this postgrowth selective intermixing. The selective band gap tuning paves a way for monolithic integration of passive and active optoelectronic devices in QD systems.