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Correlation between electrical and magnetic properties of magnetic tunnel junctions (MTJ) for magnetic random access memory (MRAM) was studied. The MTJ (Ta/NiFeCr/ PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe/Ta) was analyzed by utilizing R-H loops and MFM images. We verified that a kink in an R-H loop comes from a vortex domain of free layer. In addition, we also observed a close relationship between a domain switching behavior and an irregular R-H curve. These results would be useful for the characterization of the MTJ cell, thereby optimizing the process to realize an ultrahigh density MRAM.