By Topic

Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

A novel approximation of 2-D potential function perpendicular to the channel for fully depleted (FD) silicon-on-insulator (SOI) MOSFETs on films with vertical Gaussian profile is proposed in the paper, then an analytical threshold voltage model is derived. The model agrees well with the MEDICI numerical simulation results. It represents a feasible way to find the threshold voltage and gives some reference points in developing new 2-D models for nonuniform FD-SOI devices.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 3 )