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A novel double-side CMOS-MEMS post processing for monolithic sensor integration

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5 Author(s)
Chih-Ming Sun ; Nanoengineering & Microsystem Inst., Hsinchu ; Chuanwei Wang ; Ming-Han Tsai ; Hsieh-Shen Hsie
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This study presents a novel double-side CMOS post-process to monolithically integrate various capacitance type CMOS sensors on a single chip. In applications, the pressure sensor and linear accelerometer have been realized and monolithic integrated using the TSMC 2P4M process and the present post-process. The measurement results show that sensitivities (non-linearity) of the pressure sensor and the accelerometer are 12 mV/kPa (4.77%), and 3.9 mV/G (1.06%), respectively. The measurement ranges are 0~10 kPa, and 0.3~6 G, respectively.

Published in:

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Date of Conference:

13-17 Jan. 2008