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A 1.8 GHz to 2.1 GHz 0.25 μm CMOS wideband LNA for a multi-standard mobile receiver

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4 Author(s)

A single-ended wideband low noise amplifier for a multi-standard (1.8 GHz to 2.1 GHz) mobile receiver has been designed and simulated in a 0.25 μm CMOS technology process. The circuit topology is based on inductively degenerated common source (IDCS). The enhancement for bandwidth was performed using inductive shunt-peaking that added more freedom to the circuit. Circuit simulation results shows a power gain of 23 dB, a noise figure of 0.6 dB with IIP3 and 1-dB compression point of -5.1 dBm and -17.3 dBm respectively. The current consumption for this circuit is 9.5 mA with voltage supply of 2.5 V.

Published in:

Integrated Circuits, 2007. ISIC '07. International Symposium on

Date of Conference:

26-28 Sept. 2007

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