By Topic

CMOS Dual-Wideband Low-Noise Amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for Ultra-Wideband Wireless Receiver

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zhe-Yang Huang ; Dept. of Communication Engineering, National Chiao Tung University, Hsin-Chu, Taiwan ; Che-Cheng Huang ; Chun-Chieh Chen ; Chung-Chih Hung

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18 um standard RF CMOS process. The LNA gives 13.66 dB maximum power gain between 3.0 GHz-4.9 GHz and 10.34 dB maximum power gain between 6.0 GHz-10.3 GHz while consuming 24.07 mW through a 1.8 V supply. Over the 3.1 GHz-4.9 GHz frequency band and the 6.0 GHz-10.3 GHz, a minimum noise figure is 2.6 dB and 3.8 dB. Input return loss lower than -8.31 dB in all bandwidth have been achieved.

Published in:

2007 International Symposium on Integrated Circuits

Date of Conference:

26-28 Sept. 2007