Referenced Items are not available for this document.
This paper shows how circuit and architecture level simulations can be applied in nanoelectronics. The methodology is illustrated with two examples: passive crossbar memories (made from ZnO or molecular rectifiers) and magnetic field-coupled devices. We will demonstrate how device-level physical tools can help in the modelling of system-level properties such as power gain and scalability.
Published in:
Integrated Circuits, 2007. ISIC '07. International Symposium on
Date of Conference: 26-28 Sept. 2007
- Page(s):
- 357 - 360
- E-ISBN :
- 978-1-4244-0797-2
- Print ISBN:
- 978-1-4244-0797-2
- INSPEC Accession Number:
- 9833140
- Conference Location :
- Singapore
- Digital Object Identifier :
- 10.1109/ISICIR.2007.4441872
- Product Type:
- Conference Publications
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