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Design and Simulation of Novel Architectures for Nanodevices

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4 Author(s)
G. Csaba ; Institute for Nanoelectronics, Technische Universität München, Arcistrasse 21, D-80333, Munich, Germany ; C. Erlen ; M. Pra ; P. Lugli

This paper shows how circuit and architecture level simulations can be applied in nanoelectronics. The methodology is illustrated with two examples: passive crossbar memories (made from ZnO or molecular rectifiers) and magnetic field-coupled devices. We will demonstrate how device-level physical tools can help in the modelling of system-level properties such as power gain and scalability.

Published in:

2007 International Symposium on Integrated Circuits

Date of Conference:

26-28 Sept. 2007