By Topic

Thin Amorphous \hbox {Si/Si}_{3}\hbox {N}_{4} -Based Light-Emitting Device Prepared With Low Thermal Budget

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)

This letter reports for the first time on an electrically pumped silicon light-emitting device with a thin multilayer stacked amorphous silicon (alpha-Si, in thickness of 3-7 nm)/silicon nitride (~10 nm) structure. The observed photoluminescence (PL) is tunable from ~700 to ~670 nm, and intensity increases by decreasing the alpha-Si thickness. The PL intensity can be enhanced through postdeposition annealing at relatively low temperatures and a short annealing time (e.g., as optimized at 700degC/10min). Electroluminescence from devices that are built upon the proposed structure originates from electron-hole pair recombination, and the carrier injection mechanism is through Frenkel-Poole tunneling. Our proposed structure, being highly complimentary metal-oxide-semiconductor compatible, benefits from a low thermal budget process coupled with an accurate layer thickness control.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 3 )