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Die Bonding Process Research for SOI Membrane Pressure Sensor

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1 Author(s)
Rongfeng Guan ; Suzhou Univ. of Sci. & Technol., Suzhou

Silicon pressure sensors which are based on piezoresistive effect are in use for many fields, because of their high performance and productivity. However, when work environment temperature is over 125degC, silicon piezoresistive pressure sensors have not been used because of worse temperature performance. SOI piezoresistor pressure chip has better temperature performance than silicon pressure sensor and has evidence advantage in aspects of resisting temperature, radiation and corrosion. The SOI pressure sensor of beam-diaphragm packaging structure which can resist high temperature of 250degC has been developed and its packaging process is analyzed in the paper.

Published in:

Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on

Date of Conference:

14-17 Aug. 2007