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80-GHz Tuned Amplifier in Bulk CMOS

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3 Author(s)
Ning Zhang ; Florida Univ., Gainesville ; Chih-Ming Hung ; O, K.K.

An 80-GHz six-stage common source tuned amplifier has been demonstrated using low leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with six metal levels. It achieves power gain of 12 dB at 80 GHz with a 3-dB bandwidth of 6 GHz, noise figures (NF's) lower than 10.5 dB at frequencies between 75 and 81 GHz with the lowest NF of 9 dB. IP1 dB is -21 dBm and IIP3 is -11.5 dBm. The amplifier consumes 27 mA from a 1.2 V supply. At VDD = 1.5 V and 33 mA bias current, NF is less than 9.5 dB within the 3-dB bandwidth and reaches a minimum of 8 dB at 80 GHz.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 2 )