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Integrated VCO With Up/Down Converter for Si-Based 60 GHz WPAN Applications

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5 Author(s)
Sen, P. ; Georgia Inst. of Technol., Atlanta ; Sarkar, S. ; Dawn, D. ; Pinel, S.
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This letter presents the design and implementation of the largest reported bandwidth of a 60 GHz up/down converter with an integrated voltage controlled oscillator (VCO) in a low-cost 0.18 mum silicon-germanium process. The up/down conversion is achieved using the 2X sub-harmonic passive mixing with anti-parallel diode pairs. A 30 GHz cross-coupled VCO is designed, optimized and integrated with the sub-harmonic mixer through a cascode amplifier to meet the local oscillator power requirements. The fully integrated chip takes only 1.5 mm2 of silicon die area and consumes only 40 mW of dc power for a measured conversion loss of 12 dB at 61.5 GHz. The integrated up/down converter is measured to have greater than 9 GHz double-sided 3-dB RF bandwidth suitable for wideband high data-rate WPAN transceiver requirements. The VCO and VCO-amplifier test structures are separately fabricated and measured to have a phase noise as low as -105 dBc/Hz at 1 MHz offset with a tuning range of 2.3 GHz.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 2 )