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A 86 to 108 GHz Amplifier in 90 nm CMOS

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5 Author(s)

This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 2 )