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RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

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5 Author(s)
Gil-Bok Choi ; Pohang Univ. of Sci. & Technol., Pohang ; Seung-Ho Hong ; Sung-Woo Jung ; Hee-Sung Kang
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An accurate extraction method for series resistance and capacitance based on RF S-parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method improves the measurement accuracy and significantly reduces the frequency-dependence of capacitance. This method is demonstrated for a 1.5 nm SiO2 dielectric NMOSFET.

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Electron Device Letters, IEEE  (Volume:29 ,  Issue: 3 )