Cart (Loading....) | Create Account
Close category search window

Cylindrical silicon-on-insulator microdosimeter: Design, fabrication and TCAD modeling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Lim, W.H. ; Univ. of New South Wales, Kensington ; Ziebell, A.L. ; Cornelius, I. ; Reinhard, M.I.
more authors

This work presents a new generation silicon-on- insulator (SOI)microdosimeter device . This new device was designed and fabricated using planar processing techniques to produce a micrometer sized cylindrical shaped, well defined microdosimeter sensitive volume. Cylindrical structures were employed to allow for a better definition of the average chord length of the sensitive volume compared to the previous elongated parallelepiped solid state designs. The structures were manufactured on individual mesas situated on top of a buried oxide insulating layer. These mesa designs eliminated lateral charge diffusion. Two kinds of test structures were designed with sensitive region widths of 2 mum and 10 mum. ISE TCAD modeling of the electrostatic potential and electric field profile of the cylindrical microdosimeter were carried out to obtain 3D potential and electric field profiles. The modeling found that as expected a radial electric field was established across the cylindrical shaped sensitive volume. The modeling also found it was possible to increase the reverse bias voltage to a point where internal amplification of event signals was obtained. This is important finding for the measurements of low linear energy transfer (LET) events.

Published in:

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE  (Volume:2 )

Date of Conference:

Oct. 26 2007-Nov. 3 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.