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Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

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6 Author(s)
C. -j. Choi ; Electron. & Telecommun. Res. Inst. (ETRI), Daejeon ; M. -g. Jang ; Y. -y. Kim ; M. -s. Jun
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The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20 nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 2 )