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High-efficiency ultra-wideband power amplifier in GaN technology

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4 Author(s)
P. Colantonio ; Univ. of Roma Tor Vergata, Rome ; F. Giannini ; R. Giofre ; L. Piazzon

The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 2 )