By Topic

Modeling of Programming and Read Performance in Phase-Change Memories—Part I: Cell Optimization and Scaling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Russo, U. ; Italian Univ. Nanoelectron. Team, Milan ; Ielmini, D. ; Redaelli, A. ; Lacaita, A.L.

One of the major concerns for the feasibility of phase-change memories is the reduction of the programming current. To this aim, several efforts have been dedicated both on cell geometry and on material engineering. This paper addresses programming-current minimization by the optimization of the cell geometry and materials, programming-current scaling, and the tradeoff between programming and readout performances of the cell. A general procedure to find the optimum-cell geometry is proposed and applied to a prototype vertical cell. Then, the evolution of program and read performances through technology nodes is analyzed by numerical simulations with the aid of an analytical model, for both the isotropic- and nonisotropic-scaling approaches. The two scaling approaches are discussed and compared in terms of program and read cell performances. Finally, material optimization is considered for further program-read improvement.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 2 )