Referenced Items are not available for this document.
A growing interest has been focused on silicon on insulator (SOI) technologies over the past years. Yet, few studies were carried out regarding the integration of vertical SiGe heterojunction bipolar transistors (HBTs) using such substrates. This paper deals both with the integration of a SiGeC HBT on thin-film CMOS-compatible SOI, and a comprehensive study of its electrical behavior based on physical simulation and electrical characterization. Various aspects of the optimization of device performances are described, considering process or layout improvements.
Published in:
Electron Devices, IEEE Transactions on
(Volume:55
,
Issue:
2
)
Date of Publication: Feb. 2008
- Page(s):
- 585 - 593
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 9758417
- Digital Object Identifier :
- 10.1109/TED.2007.912361
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 21 January 2008
- Issue Date :
- Feb. 2008
- Sponsored by :
- IEEE Electron Devices Society
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