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Fabrication and Performance of 0.25- \mu m Gate Length Depletion-Mode GaAs-Channel MOSFETs With Self-Aligned InAlP Native Oxide Gate Dielectric

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4 Author(s)
Jing Zhang ; Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN ; Thomas H. Kosel ; Douglas C. Hall ; Patrick Fay

The fabrication and performance of 0.25- mum gate length GaAs-channel MOSFETs using the wet thermal native oxide of InAlP as the gate dielectric are reported. A fabrication process that self-aligns the gate oxidation to the gate recess and metallization to reduce the source access resistance is demonstrated for the first time. The fabricated devices exhibit a peak extrinsic transconductance of 144 mS/mm, an on-resistance of 3.46 Omega-mm, and a threshold voltage of -1.8 V for typical 0.25 -mum gate devices. A record cutoff frequency of 31 GHz for a GaAs-channel MOSFET and a maximum frequency of oscillation fmax of 47 GHz have also been measured.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 2 )