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Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier

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9 Author(s)
Zang, H. ; Inst. of Microelectron., Singapore ; Lee, S.J. ; Loh, W.-Y. ; Wang, J.
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We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium- metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (~300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400degC/600degC combined with a thin (~10 nm) low-temperature Si/Si0.8 Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ~10 -7 A at -1 V bias (width/spacing: 30/2.5 mum). Under normal incidence illumination at 1.55 mum, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under - 1 V bias is up to 6 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 2 )

Date of Publication:

Feb. 2008

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