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Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High- k Dielectrics Subjected to PBTI Stress

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3 Author(s)
Dawei Heh ; SEMATECH, Austin, TX ; Young, Chadwin D. ; Bersuker, G.

A single-pulse technique, with a wide range of pulse times, has been applied to study positive bias temperature instability in high-k nMOSFETs. It is shown that the charging phenomenon includes both fast and slow electron trapping processes with rather well-defined characteristic times, which differ by six orders of magnitude. On the other hand, the poststress charge relaxation cannot be described by a simple detrapping process, which makes identifying the dominant detrapping mechanism complicated.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 2 )

Date of Publication:

Feb. 2008

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