By Topic

Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zhihong Chen ; IBM T J. Watson Res. Center, Yorktown Heights, NY ; Farmer, D. ; Sheng Xu ; Gordon, R.
more authors

In this letter, we demonstrate a gate-all-around single-wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable substrate. The fabrication process and device measurements are discussed in the letter. We also argue in how far charges in the gate oxide are responsible for the observed nonideal device performance.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 2 )