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Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure

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5 Author(s)
Jin, C.Y. ; Department of Electronic & Electrical Engineering, University of Sheffield, S1 3JD, UK ; Liu, H.Y. ; Zhang, S.Y. ; Airey, R.
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A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current density of 178A/cm2 is demonstrated with 1.34-μm GaInNAs/GaAs lasers.

Published in:

Quantum Electronics and Laser Science Conference, 2007. QELS '07

Date of Conference:

6-11 May 2007