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Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

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4 Author(s)
Zhao, Zhiya ; Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708 USA ; Lantz, K.R. ; Yi, Changhyun ; Stiff-Roberts, A.D.

Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated.

Published in:

Quantum Electronics and Laser Science Conference, 2007. QELS '07

Date of Conference:

6-11 May 2007