Cart (Loading....) | Create Account
Close category search window
 

Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Rao, P.R. ; Delft Univ. of Technol., Delft ; Xinyang Wang ; Theuwissen, A.J.P.

In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in deep-submicron technology is developed to study the sensor's sensitivity towards gamma-ray irradiation. It is found that the spectral degradation due to gamma-rays is mainly through changes in the top-layer material characteristics and Si/SiO2 interface. There is a non-trivial contribution of STI (shallow trench isolations) towards the dark current of the sensor, and it turns out to be highly sensitive to radiation damage.

Published in:

Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European

Date of Conference:

11-13 Sept. 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.