Referenced Items are not available for this document.
Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With fT in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.
Published in:
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Date of Conference: 11-13 Sept. 2007
- Page(s):
- 107 - 110
- ISSN :
- 1930-8876
- E-ISBN :
- 978-1-4244-1124-5
- Print ISBN:
- 978-1-4244-1123-8
- INSPEC Accession Number:
- 9832648
- Conference Location :
- Munich
- Digital Object Identifier :
- 10.1109/ESSDERC.2007.4430890
- Product Type:
- Conference Publications
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