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Single-grain Si thin-film transistors for analog and RF circuit applications

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10 Author(s)
N. Saputra ; Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), Delft University of Technology, The Netherlands ; M. Danesh ; A. Baiano ; R. Ishihara
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Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With fT in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.

Published in:

ESSDERC 2007 - 37th European Solid State Device Research Conference

Date of Conference:

11-13 Sept. 2007