Referenced Items are not available for this document.
Tunneling effects on temperature-dependent photocurrent intensity in In
Temperature dependence of the photocurrent (PC) intensity has been experimentally investigated as a function of reverse bias in high quality In0.1Ga0.9As/A0.15Ga0.85As multiple quantum wells (MQW) in a p-i-n diode configuration. PC features show unusual behaviors at low temperatures, especially at 15 K, such as (1) the PC intensity increase with the electric field under low field conditions at 15 K and (2) a reduction up to 60 K and a rise above 60 K, while the PC intensity under high field conditions decreases with temperature. These unusual PC features under low field conditions at low temperatures are explained by considering exciton ionization, the thermal population and the tunneling probability.
Published in:
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Date of Conference: 6-8 Dec. 2006
- Page(s):
- 302 - 304
- E-ISBN :
- 978-1-4244-0578-7
- Print ISBN:
- 978-1-4244-0578-7
- INSPEC Accession Number:
- 9821940
- Conference Location :
- Perth, WA
- Digital Object Identifier :
- 10.1109/COMMAD.2006.4429942
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
