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Numerical Modelling Study of the Sensitivity of SOS MOSFET Characteristics to Silicon film Thickness and Back Surface Trapped Charge Variation

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3 Author(s)
Bertling, K. ; Queensland Univ., Brisbane ; Rakic, A.D. ; Yew-Tong Yeow

In this paper we present a numerical study of the sensitivity of silicon-on-sapphire MOSFET characteristics to silicon film thickness and back surface trapped charge. We demonstrate that the thickness of the film and the back surface trapped charge have a significant effect on the operation of the device and in particular the reduction of the threshold voltage.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Date of Conference:

6-8 Dec. 2006