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A 26 – 65 GHz GaAs pHEMT cascaded single stage distributed amplifier with high gain/area efficiency

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3 Author(s)
Kai-Yun Lin ; Department of Electrical Engineering, National Central University, Taoyuan County 32001, China ; I-Shan Chen ; Hwann-Kaeo Chiou

This paper demonstrates the design of a miniature three-stage cascaded single stage distributed amplifier (CSSDA), which functions over the frequency range from 26 GHz to 65 GHz with a 16.5 dB small signal gain and a gain bandwidth product (GBW) of 260 GHz. This three-stage CSSDA was designed and fabricated using a 0.15 mum GaAs- based pseudomorphic high electron-mobility transistor (pHEMT) MMIC foundry process provided by WIN Semiconductor, and the chip size is compact as 1.65 times 0.83 mm which yields the best gain/area efficiency among the previous works.

Published in:

2006 Asia-Pacific Microwave Conference

Date of Conference:

12-15 Dec. 2006