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A high power performance 60 GHz push-push oscillator MMIC in metamorphic HEMT technology

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4 Author(s)
J. -W. Lee ; School of Electronics and Information, Kyung Hee University, 446-701, Korea ; S. -W. Kim ; G. -S. Seol ; K. -S. Seo

This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 mum GaAs metamorphic high electron-mobility transistors (MHEMTs). The devices with a 0.12 mum gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an fT of 170 GHz, and an fMAX of more than 300 GHz. By combining two sub-oscillators having 6 x 50 mum peripheries MHEMT, the push-push oscillator achieved 5.8 dBm of output power at 59.9 GHz with good fundamental suppression. This is the first monolithic push-push oscillator in 60 GHz band fabricated using MHEMT technology, and demonstrates a potential of MHEMT for cost effective millimeter wave commercial applications.

Published in:

2006 Asia-Pacific Microwave Conference

Date of Conference:

12-15 Dec. 2006