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A single chip dual-band low noise amplifier

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2 Author(s)
Shin-Ming Wang ; Ind. Technol. Res. Inst., Seoul ; Cheng-Chung Chen

This paper describes a dual-bands low noise amplifier design for WCDMA and WiMAX applications. The low-noise amplifier (LNA) is implemented with the proposed dual-band matching network that consists of a high-pass and low-pass ladder. The LNA is fabricated in 0.5 um enhancement-mode pHEMT (E-mode pHEMT) technology for high linearity and low noise application. The measured noise figures (NF) and insertion gains (S21) are 1.2 dB and 16.1 dB at WCDMA band, 1.45 dB and 15.1 dB at WiMAX band. With 3-V supply voltage and 28.8-mW power consumption, the input third order intercept points (IIP3) are 6.5 dBm and 8.9 dBm for WCDMA and WiMAX, respectively.

Published in:

TENCON 2007 - 2007 IEEE Region 10 Conference

Date of Conference:

Oct. 30 2007-Nov. 2 2007