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Etch rates for Si-face 4H-SiC using H2 and a C3H8 partial pressure

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6 Author(s)

In an effort to calibrate nitrogen incorporation into the growing layer, a nitrogen step-doped sample was grown. In an attempt to reduce or eliminate incidental etching during pre- and post- growth temperature ramps, additional samples were etched under different propane partial pressures. With increasing propane partial pressure the etch rate decreases.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007