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This paper discusses about SiNW-based non-volatile memory based on self-aligned CVD-grown SiNWs and a HfO2 charge storage layer. With double gates and surrounding top gate high-k dielectric stacks, the SiNWs memory devices operates with a small program/erase voltage and low power consumption. Compared to previous work on SiNW SONOS memory devices, structures that use HfO2 as a top gate surrounding dielectric exhibit better gate control, a larger memory window, and a higher ON/OFF current ratio. Additionally, this self-aligned method of integrating SiNWs into memory devices is more practical for large-scale fabrication.