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Two-Band k·p model for the conduction band in silicon: impact of Strain and confinement on band structure and mobility

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5 Author(s)

In this work we demonstrate that the two-band kldrp model ((Sverdlov et al., 2007) describes accurately dependences of the valley shifts and the effective masses on the shear strain component. The theory includes non-parabolicity effects due to the interaction between the two lowest conduction bands and provides an analytical expression for the dependence of the effective masses on shear strain.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007

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