By Topic

Reliability of strained-channel NMOSFETs with SiN capping layer on hi-wafers with a thin LPCVD-TEOS buffer layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Tzu-I Tsai ; Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, China ; Yao-Jen Lee ; King-Sheng Chen ; Jeff Wang
more authors

The local strained channel (LSC) technique is proposed to provide tensile strained channel in nMOSFETs. However, the device reliability associated with the strained device owing to the strain, and excess hydrogen and nitrogen incorporation from the deposited SiN layer is an imminent concern. In line with this, the incorporation of a thin LPCVD-TEOS buffer layer to improve the reliability performance has been proposed. In addition, hydrogen annealed wafers (Hi-wafer) have been reported having reduced oxygen defects in Czochralski (CZ) wafers, with improved microroughness and defect on the surface after high hydrogen annealing.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007