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Pseudo quantum dot behavior due to excitonic transitions in wide gap quantum wire lasers: InGaN-AlGaN and ZnCdSe-ZnMgSSe material systems

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2 Author(s)
Wenli Huang ; Department of Electrical Engineering & Computer Science, US Military Academy, WestPoint, NY 10996, USA ; Faquir C. Jain

This paper presents simulations on InGaN-AlGaN and ZnCdSe-ZnMgSSe quantum wire lasers having excitonic transitions. We have found that the threshold current density (Jth) in a quantum wire laser is almost temperature independent when exciton binding energies are in the range of 30-50 meV. This behavior is like quantum dot lasers having free carrier transitions.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007